SIC HPD Module 1200V15mΩ

FOB Price 1832 - 1832 USD / 1

Quantity	5 - 1000
Price	50000

MOQ	5 pcs
Port	Yantian Port
Packaging	Carton
Lead Time	4 week

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Product Details

SiC HPD Modules (Silicon Carbide High Power Density Modules) are advanced power electronic devices that utilize the superior properties of silicon carbide (SiC) material to enhance power conversion efficiency and power density. Compared to traditional silicon-based power devices, SiC devices offer higher breakdown voltage, faster switching speeds, and lower conduction losses, making them particularly effective in high-frequency and high-temperature applications.

Key Features:

High Efficiency: The high breakdown voltage and thermal conductivity of SiC material provide significant advantages in high power density applications.

High-Frequency Operation: Capable of operating at higher frequencies, thereby reducing the size and cost of filters and other passive components.

Low Losses: Reduced conduction and switching losses improve overall system efficiency.

High-Temperature Operation: Can operate stably at higher temperatures, reducing the need for extensive cooling systems.

Applications: