Gas Distribution Plates Aluminum Nitride (AIN) Ceramic

Quantity	100 - 199	200+ - 200+
Price	US $30.00	US $28.00

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Model NO.	Aluminum Nitride (AIN) ceramic	Technology	Hot Pressing Aln Aluminum Nitride
Keyword	HP Aln Aluminum Nitride	Flexural Strength	350MPa
Elastic Modulus	320gpa	Harness	890hl
Thermal Expansion Coefficient	4.4	Dielectric Constant	9
Usage	Thermal Conductivity	Max. Size	Od380*H50mm
Export Experience	Aluminum Nitride (Ain) Ceramic	Advantage	Semiconductor Aluminum Nitride Ceramic Parts
Material	Aln Aluminum Nitride	Transport Package	Air Freight Safety Packing
Specification	36534550mm	Trademark	PENSC aln aluminum nitride
Origin	China	HS Code	6914900000
Production Capacity	320000PCS Per Day

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Shandong Pengcheng Advanced Ceramics Co.,Ltd is set up since year of 1997, focus on ALN ALUMINUM NITRIDE Ceramic materials research & production.

HP AlN Ceramics, purity 99.5%, thermal conductivity has 140w/(m*k)to 210w/(m*k).

Possessed 44 sets of vacuum furnaces and matched processing, testing equipments, ranking first of China in the output,quality and sales volume.
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Aluminum Nitride (AIN) ceramic

Hot pressing ALN Aluminum nitride ceramic

- High purity
- Electrical insulator
- High thermal conductivity
- Critical thermal management material
- Reduced Particulate Generation
- Corrosion/Erosion Resistance
- Controlled Electrical Properties

Warpage	Density	Melting point	RT Resistivity	Dielectric Constant	Dielectric Loss	Dielectric Breakdown Voltage	Bending strength	Youngs Modulus
<2.5‰	3.3g/cm3	2053ºC	1014Ω·cm	8.8(1MHz)	5(1MHz)	>15kv/mm	380MPa	340Gpa
Coefficient of heat expansion	Specific Heat at RT	Thermal Expansion	Thermal Conductivity	Shape
4.6(10-6/k)	740J/(kg.K)	5(10-6/K)	140-210w/m*k	Customized

- Cover plates and MRI equipment(Magnetic Resonance Imaging)
- High-power detectors, plasma generators, military radios
- Electrostatic chucks and heating plates for semiconductors and integrated circuits
- Infrared and microwave window material